N-channel JFET, TO-92 package, offering 300mA continuous drain current and 60V drain-to-source breakdown voltage. Features 4Ω drain-to-source resistance, 50pF input capacitance, and fast switching times with turn-on delay of 3ns and fall time of 5ns. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1W. Designed for through-hole mounting.
PackageTO-92-3
MountingThrough Hole
PolarityN-CHANNEL
Power1W
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Technical Specifications
Microchip VN2106N3-G technical specifications.
General
Package/Case
TO-92-3
Continuous Drain Current (ID)
300mA
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
4R
Fall Time
5ns
Gate to Source Voltage (Vgs)
20V
Height
5.33mm
Input Capacitance
50pF
Length
5.21mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
1000
Packaging
Bulk
Polarity
N-CHANNEL
Power Dissipation
1W
Radiation Hardening
No
Rds On Max
4R
Turn-Off Delay Time
6ns
Turn-On Delay Time
3ns
Weight
0.016oz
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Microchip VN2106N3-G Datasheet
Download the complete datasheet for Microchip VN2106N3-G to view detailed technical specifications.
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