MICROCHIP

VN2110K1-G

Datasheet

200mA 100V N-CH JFET SOT-23-3 Surface Mount

Microchip

VN2110K1-G

Name: VN2110K1-G Microchip
Brand: Microchip
SKU: VN2110K1-G

200mA 100V N-CH JFET SOT-23-3 Surface Mount

N-channel, small-signal MOSFET in a SOT-23-3 package. Features 200mA continuous drain current, 100V drain-to-source breakdown voltage, and 4Ω drain-to-source resistance. Operates with a gate-to-source voltage up to 20V, offering fast switching with turn-on delay of 3ns and fall time of 5ns. Maximum power dissipation is 360mW, with an operating temperature range of -55°C to 150°C. Surface mountable and RoHS compliant.

PackageSOT-23-3

MountingSurface Mount

PolarityN-CHANNEL

Power360mW

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Technical Specifications

Microchip VN2110K1-G technical specifications.

General

Package/Case	SOT-23-3
Continuous Drain Current (ID)	200mA
Drain to Source Breakdown Voltage	100V
Drain to Source Resistance	4R
Fall Time	5ns
Gate to Source Voltage (Vgs)	20V
Height	1.12mm
Input Capacitance	50pF
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	360mW
Mount	Surface Mount
Number of Channels	1
Number of Elements	1
Package Quantity	3000
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	360mW
Radiation Hardening	No
Rds On Max	4R
RoHS Compliant	Yes
Turn-Off Delay Time	6ns
Turn-On Delay Time	3ns
Weight	0.050717oz