N-channel, small-signal MOSFET in a SOT-23-3 package. Features 200mA continuous drain current, 100V drain-to-source breakdown voltage, and 4Ω drain-to-source resistance. Operates with a gate-to-source voltage up to 20V, offering fast switching with turn-on delay of 3ns and fall time of 5ns. Maximum power dissipation is 360mW, with an operating temperature range of -55°C to 150°C. Surface mountable and RoHS compliant.
PackageSOT-23-3
MountingSurface Mount
PolarityN-CHANNEL
Power360mW
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Technical Specifications
Microchip VN2110K1-G technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
200mA
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
4R
Fall Time
5ns
Gate to Source Voltage (Vgs)
20V
Height
1.12mm
Input Capacitance
50pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
360mW
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
360mW
Radiation Hardening
No
Rds On Max
4R
RoHS Compliant
Yes
Turn-Off Delay Time
6ns
Turn-On Delay Time
3ns
Weight
0.050717oz
Compliance
RoHS
Compliant
Datasheet
Microchip VN2110K1-G Datasheet
Download the complete datasheet for Microchip VN2110K1-G to view detailed technical specifications.
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