N-channel, small-signal MOSFET in a SOT-23-3 package. Features 200mA continuous drain current, 100V drain-to-source breakdown voltage, and 4Ω drain-to-source resistance. Operates with a gate-to-source voltage up to 20V, offering fast switching with turn-on delay of 3ns and fall time of 5ns. Maximum power dissipation is 360mW, with an operating temperature range of -55°C to 150°C. Surface mountable and RoHS compliant.
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| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 200mA |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 4R |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.12mm |
| Input Capacitance | 50pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 360mW |
| Radiation Hardening | No |
| Rds On Max | 4R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 6ns |
| Turn-On Delay Time | 3ns |
| Weight | 0.050717oz |
| RoHS | Compliant |
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