N-channel enhancement-mode vertical DMOS FET provides 60 V drain-to-source breakdown voltage in a 3-lead TO-92 package. The device supports 230 mA continuous drain current and 1 A pulsed drain current with 7.5 ohm maximum on-resistance. Gate threshold voltage is specified from 0.6 V to 2.5 V, and the gate-to-source rating is ±30 V. Operating ambient and storage temperature ranges extend from -55°C to +150°C.
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| FET Type | N-Channel Enhancement-Mode Vertical DMOS |
| Drain-to-Source Breakdown Voltage | 60 minV |
| Gate-to-Source Voltage | ±30 maxV |
| Continuous Drain Current | 230mA |
| Pulsed Drain Current | 1A |
| Power Dissipation at 25°C | 1W |
| Gate Threshold Voltage | 0.6 to 2.5V |
| On-State Drain Current | 0.75 minA |
| Drain-to-Source On Resistance | 7.5 maxΩ |
| Gate Body Leakage Current | 100 maxnA |
| Input Capacitance | 60 maxpF |
| Output Capacitance | 25 maxpF |
| Reverse Transfer Capacitance | 8 maxpF |
| Turn-On Time | 10 maxns |
| Turn-Off Time | 10 maxns |
| Operating Ambient Temperature | -55 to +150°C |
| Junction-to-Ambient Thermal Resistance | 132°C/W |
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