P-CHANNEL JFET, TO-92 package, offering 250mA continuous drain current and a -40V drain-to-source breakdown voltage. Features 8Ω drain-to-source resistance (Rds On Max) and a maximum power dissipation of 1W. Operates across a wide temperature range from -55°C to 150°C. Includes fast switching characteristics with 4ns turn-on delay and 4ns fall time. Through-hole mount design with 60pF input capacitance.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Microchip VP0104N3-G datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | TO-92 |
| Continuous Drain Current (ID) | 250mA |
| Drain to Source Breakdown Voltage | -40V |
| Drain to Source Resistance | 8R |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 5.33mm |
| Input Capacitance | 60pF |
| Length | 5.21mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | P-CHANNEL |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Rds On Max | 8R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 8ns |
| Turn-On Delay Time | 4ns |
| Weight | 0.016oz |
| Width | 4.19mm |
| RoHS | Compliant |
Download the complete datasheet for Microchip VP0104N3-G to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
