MICROCHIP

VP2106N3-G

Datasheet

P-CH JFET, 60V, 250mA, TO-92, Through Hole

Microchip

VP2106N3-G

Name: VP2106N3-G Microchip
Brand: Microchip
SKU: VP2106N3-G

P-CH JFET, 60V, 250mA, TO-92, Through Hole

P-CHANNEL, small signal JFET in a TO-92 package, designed for through-hole mounting. Features a continuous drain current of 250mA and a drain-to-source breakdown voltage of -60V. Offers a low drain-to-source resistance (Rds On Max) of 12 Ohms. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 1W. Includes fast switching characteristics with turn-on delay time of 4ns and fall time of 5ns.

PackageTO-92

MountingThrough Hole

PolarityP-CHANNEL

Power740mW

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Technical Specifications

Microchip VP2106N3-G technical specifications.

General

Package/Case	TO-92
Continuous Drain Current (ID)	250mA
Drain to Source Breakdown Voltage	-60V
Drain to Source Resistance	12R
Drain to Source Voltage (Vdss)	60V
Fall Time	5ns
Gate to Source Voltage (Vgs)	20V
Height	5.33mm
Input Capacitance	60pF
Length	5.21mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	1W
Mount	Through Hole
Number of Channels	1
Number of Elements	1
Package Quantity	1000
Packaging	Bulk
Polarity	P-CHANNEL
Power Dissipation	740mW
Radiation Hardening	No
Rds On Max	12R
Turn-Off Delay Time	5ns
Turn-On Delay Time	4ns
Weight	0.016oz
Width	4.19mm