P-CHANNEL Junction Field-Effect Transistor (JFET) designed for small signal applications. Features a continuous drain current of 640mA and a drain-to-source breakdown voltage of -60V. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 740mW. Packaged in a TO-92 through-hole mount configuration, this RoHS compliant component offers fast switching characteristics with turn-on delay time of 4ns and fall time of 22ns.
PackageTO-92
MountingThrough Hole
PolarityP-CHANNEL
Power1W
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Technical Specifications
Microchip VP2206N3-G technical specifications.
General
Package/Case
TO-92
Continuous Drain Current (ID)
640mA
Drain to Source Breakdown Voltage
-60V
Drain to Source Resistance
900mR
Drain to Source Voltage (Vdss)
60V
Fall Time
22ns
Gate to Source Voltage (Vgs)
20V
Height
5.33mm
Input Capacitance
450pF
Length
5.21mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
740mW
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
1000
Packaging
Bulk
Polarity
P-CHANNEL
Power Dissipation
1W
Radiation Hardening
No
Rds On Max
900mR
RoHS Compliant
Yes
Turn-Off Delay Time
16ns
Turn-On Delay Time
4ns
Weight
0.016oz
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Microchip VP2206N3-G Datasheet
Download the complete datasheet for Microchip VP2206N3-G to view detailed technical specifications.
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