P-CHANNEL Junction Field-Effect Transistor (JFET) designed for small signal applications. Features a continuous drain current of 640mA and a drain-to-source breakdown voltage of -60V. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 740mW. Packaged in a TO-92 through-hole mount configuration, this RoHS compliant component offers fast switching characteristics with turn-on delay time of 4ns and fall time of 22ns.
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Microchip VP2206N3-G technical specifications.
| Package/Case | TO-92 |
| Continuous Drain Current (ID) | 640mA |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 900mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 5.33mm |
| Input Capacitance | 450pF |
| Length | 5.21mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 740mW |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | P-CHANNEL |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Rds On Max | 900mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 4ns |
| Weight | 0.016oz |
| Width | 4.19mm |
| RoHS | Compliant |
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