P-channel JFET with 500V drain-source breakdown voltage and 100mA continuous drain current. Features 30 Ohm drain-source resistance (Rds On Max) and 20V gate-source voltage. Operates across a -55°C to 150°C temperature range with a maximum power dissipation of 740mW. Packaged in a TO-92 through-hole mount for small signal applications.
PackageTO-92
MountingThrough Hole
PolarityP-CHANNEL
Power1W
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Technical Specifications
Microchip VP2450N3-G technical specifications.
General
Package/Case
TO-92
Continuous Drain Current (ID)
100mA
Drain to Source Breakdown Voltage
-500V
Drain to Source Resistance
30R
Drain to Source Voltage (Vdss)
500V
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Height
5.33mm
Input Capacitance
190pF
Length
5.21mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
740mW
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
1000
Packaging
Bulk
Polarity
P-CHANNEL
Power Dissipation
1W
Radiation Hardening
No
Rds On Max
30R
Turn-Off Delay Time
45ns
Turn-On Delay Time
10ns
Weight
0.016oz
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Microchip VP2450N3-G Datasheet
Download the complete datasheet for Microchip VP2450N3-G to view detailed technical specifications.
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