P-channel power MOSFET for surface mount applications. Features a -500V drain-to-source breakdown voltage and 160mA continuous drain current. Offers 30 Ohm drain-to-source resistance (Rds On Max) and 1.6W maximum power dissipation. Operates within a temperature range of -55°C to 150°C, with typical turn-on delay of 10ns and fall time of 25ns. Packaged in SOT-89-3 for tape and reel deployment.
PackageSOT-89-3
MountingSurface Mount
PolarityP-CHANNEL
Power1.6W
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Technical Specifications
Microchip VP2450N8-G technical specifications.
General
Package/Case
SOT-89-3
Continuous Drain Current (ID)
160mA
Drain to Source Breakdown Voltage
-500V
Drain to Source Resistance
30R
Drain to Source Voltage (Vdss)
-500V
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Height
1.6mm
Input Capacitance
190pF
Length
4.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.6W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.6W
Radiation Hardening
No
Rds On Max
30R
Turn-Off Delay Time
45ns
Turn-On Delay Time
10ns
Weight
0.001862oz
Width
2.6mm
Compliance
RoHS
Compliant
Datasheet
Microchip VP2450N8-G Datasheet
Download the complete datasheet for Microchip VP2450N8-G to view detailed technical specifications.
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