P-channel power MOSFET for surface mount applications. Features a -500V drain-to-source breakdown voltage and 160mA continuous drain current. Offers 30 Ohm drain-to-source resistance (Rds On Max) and 1.6W maximum power dissipation. Operates within a temperature range of -55°C to 150°C, with typical turn-on delay of 10ns and fall time of 25ns. Packaged in SOT-89-3 for tape and reel deployment.
Sign in to ask questions about the Microchip VP2450N8-G datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Microchip VP2450N8-G technical specifications.
| Package/Case | SOT-89-3 |
| Continuous Drain Current (ID) | 160mA |
| Drain to Source Breakdown Voltage | -500V |
| Drain to Source Resistance | 30R |
| Drain to Source Voltage (Vdss) | -500V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.6mm |
| Input Capacitance | 190pF |
| Length | 4.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.6W |
| Radiation Hardening | No |
| Rds On Max | 30R |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.001862oz |
| Width | 2.6mm |
| RoHS | Compliant |
Download the complete datasheet for Microchip VP2450N8-G to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
