P-channel power MOSFET for surface mount applications. Features a -500V drain-to-source breakdown voltage and 160mA continuous drain current. Offers 30 Ohm drain-to-source resistance (Rds On Max) and 1.6W maximum power dissipation. Operates within a temperature range of -55°C to 150°C, with typical turn-on delay of 10ns and fall time of 25ns. Packaged in SOT-89-3 for tape and reel deployment.
PackageSOT-89-3
MountingSurface Mount
PolarityP-CHANNEL
Power1.6W
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Technical Specifications
Microchip VP2450N8-G technical specifications.
General
| Package/Case | SOT-89-3 |
| Continuous Drain Current (ID) | 160mA |
| Drain to Source Breakdown Voltage | -500V |
| Drain to Source Resistance | 30R |
| Drain to Source Voltage (Vdss) | -500V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.6mm |
| Input Capacitance | 190pF |
| Length | 4.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.6W |
| Radiation Hardening | No |
| Rds On Max | 30R |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.001862oz |
| Width | 2.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Microchip VP2450N8-G Datasheet
Download the complete datasheet for Microchip VP2450N8-G to view detailed technical specifications.
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