P-CHANNEL JFET with 650mA continuous drain current and 30V drain-to-source breakdown voltage. Features 600mR drain-to-source resistance and 15ns fall time. Operates from -55°C to 150°C with 740mW power dissipation. Packaged in TO-92 for through-hole mounting.
PackageTO-92
MountingThrough Hole
PolarityP-CHANNEL
Power740mW
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Technical Specifications
Microchip VP3203N3-G technical specifications.
General
Package/Case
TO-92
Continuous Drain Current (ID)
650mA
Drain to Source Breakdown Voltage
-30V
Drain to Source Resistance
600mR
Drain to Source Voltage (Vdss)
30V
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
5.33mm
Input Capacitance
300pF
Length
5.21mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
740mW
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
1000
Packaging
Bulk
Polarity
P-CHANNEL
Power Dissipation
740mW
Radiation Hardening
No
Rds On Max
600mR
Turn-Off Delay Time
25ns
Turn-On Delay Time
10ns
Weight
0.016oz
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Microchip VP3203N3-G Datasheet
Download the complete datasheet for Microchip VP3203N3-G to view detailed technical specifications.
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