P-CHANNEL JFET with 650mA continuous drain current and 30V drain-to-source breakdown voltage. Features 600mR drain-to-source resistance and 15ns fall time. Operates from -55°C to 150°C with 740mW power dissipation. Packaged in TO-92 for through-hole mounting.
PackageTO-92
MountingThrough Hole
PolarityP-CHANNEL
Power740mW
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Technical Specifications
Microchip VP3203N3-G technical specifications.
General
| Package/Case | TO-92 |
| Continuous Drain Current (ID) | 650mA |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 600mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 5.33mm |
| Input Capacitance | 300pF |
| Length | 5.21mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 740mW |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | P-CHANNEL |
| Power Dissipation | 740mW |
| Radiation Hardening | No |
| Rds On Max | 600mR |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.016oz |
| Width | 4.19mm |
Compliance
| RoHS | Compliant |
Datasheet
Microchip VP3203N3-G Datasheet
Download the complete datasheet for Microchip VP3203N3-G to view detailed technical specifications.
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