MICROCHIP

VP3203N8-G

Datasheet

P-CH MOSFET, 30V, 1.1A, 600mR, SOT-89, SM

Microchip

VP3203N8-G

Name: VP3203N8-G Microchip
Brand: Microchip
SKU: VP3203N8-G

P-CH MOSFET, 30V, 1.1A, 600mR, SOT-89, SM

P-CHANNEL Power MOSFET, Surface Mount, SOT-89 package. Features -30V Drain to Source Breakdown Voltage, 1.1A Continuous Drain Current, and 600mR Drain to Source Resistance. Operates from -55°C to 150°C with a maximum power dissipation of 1.6W. Includes 15ns fall time, 25ns turn-off delay, and 10ns turn-on delay. RoHS compliant and lead-free.

PackageSOT-89

MountingSurface Mount

PolarityP-CHANNEL

Power1.6W

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Technical Specifications

Microchip VP3203N8-G technical specifications.

General

Package/Case	SOT-89
Continuous Drain Current (ID)	1.1A
Drain to Source Breakdown Voltage	-30V
Drain to Source Resistance	600mR
Drain to Source Voltage (Vdss)	-30V
Fall Time	15ns
Gate to Source Voltage (Vgs)	20V
Height	1.6mm
Input Capacitance	300pF
Lead Free	Lead Free
Length	4.6mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	1.6W
Mount	Surface Mount
Number of Channels	1
Number of Elements	1
Package Quantity	2000
Packaging	Tape and Reel
Polarity	P-CHANNEL
Power Dissipation	1.6W
Radiation Hardening	No
Rds On Max	600mR
RoHS Compliant	Yes
Turn-Off Delay Time	25ns
Turn-On Delay Time	10ns
Weight	0.001862oz
Width	2.6mm