P-CHANNEL Power MOSFET, Surface Mount, SOT-89 package. Features -30V Drain to Source Breakdown Voltage, 1.1A Continuous Drain Current, and 600mR Drain to Source Resistance. Operates from -55°C to 150°C with a maximum power dissipation of 1.6W. Includes 15ns fall time, 25ns turn-off delay, and 10ns turn-on delay. RoHS compliant and lead-free.
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Microchip VP3203N8-G technical specifications.
| Package/Case | SOT-89 |
| Continuous Drain Current (ID) | 1.1A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 600mR |
| Drain to Source Voltage (Vdss) | -30V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.6mm |
| Input Capacitance | 300pF |
| Lead Free | Lead Free |
| Length | 4.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.6W |
| Radiation Hardening | No |
| Rds On Max | 600mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.001862oz |
| Width | 2.6mm |
| RoHS | Compliant |
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