RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
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Microchip VRF141MP technical specifications.
| Max Operating Temperature | 200 |
| Number of Terminals | 4 |
| Terminal Position | RADIAL |
| Number of Elements | 1 |
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
