This 216-pin VFBGA-packaged DDR DRAM from Micron operates within a supply voltage range of 1.14V to 1.2V and 1.2V to 1.3V. It features 256M words code and 268M words of memory. The device is designed for use in a variety of applications, including those requiring high-density memory solutions.
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Micron EDBA164B2PR-1D-F-D technical specifications.
| Number of Terminals | 216 |
| Terminal Position | BOTTOM |
| JEDEC Package Code | S-PBGA-B216 |
| Width | 12 |
| Length | 12 |
| Number of Functions | 1 |
| Supply Voltage-Nom (Vsup) | 1.2 |
| Supply Voltage-Max (Vsup) | 1.3 |
| Supply Voltage-Min (Vsup) | 1.14 |
| Number of Words | 268435456 |
| Number of Words Code | 256000000 |
| Memory IC Type | DDR DRAM |
| Number of Ports | 1 |
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for Micron EDBA164B2PR-1D-F-D to view detailed technical specifications.
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