64M-bit NOR Flash memory, featuring a parallel interface and 90ns maximum access time. This component offers 8M x 8 or 4M x 16 word organization with an asymmetrical, sectored architecture and a boot block located at the top. It operates from 3V/3.3V typical supply voltage with programming voltages ranging from 2.7-3.6V and 11.5-12.5V. Packaged in a 63-pin TFBGA with a 0.8mm pin pitch, it supports surface mounting and operates within a 0°C to 70°C temperature range.
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Micron M29W640DT90ZA1E technical specifications.
| Basic Package Type | Ball Grid Array |
| Package Family Name | BGA |
| Package/Case | TFBGA |
| Package Description | Thin Fine Pitch Ball Grid Array |
| Lead Shape | Ball |
| Pin Count | 63 |
| PCB | 63 |
| Package Length (mm) | 11 |
| Package Width (mm) | 7 |
| Package Height (mm) | 0.9(Max) |
| Seated Plane Height (mm) | 0.9(Max) |
| Pin Pitch (mm) | 0.8 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Density | 64Mbit |
| Interface Type | Parallel |
| Maximum Operating Current | 10mA |
| Block Organization | Asymmetrical |
| Architecture | Sectored |
| Programming Voltage | 2.7 to 3.6|11.5 to 12.5V |
| Timing Type | Asynchronous |
| Maximum Access Time | 90ns |
| Number of Words | 8M/4M |
| Boot Block | Yes |
| Typical Operating Supply Voltage | 3|3.3V |
| Address Bus Width | 23/22bit |
| Location of Boot Block | Top |
| Number of Bits per Word | 8/16bit |
| Min Operating Temperature | 0°C |
| Max Operating Temperature | 70°C |
| Cage Code | 6Y440 |
| HTS Code | 8542320071 |
| Schedule B | 8542320070 |
| ECCN | 3A991.b.1.a |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
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