32M-bit NOR Flash memory with a 2M x 16 configuration, featuring both Parallel and Serial interfaces. This integrated circuit operates at a typical 1.8V supply voltage, with programming voltages ranging from 1.65-2V and 11.4-12.6V. It offers a maximum access time of 100ns and supports asynchronous and synchronous timing. The component is housed in a 56-pin VFBGA package with a 0.75mm pin pitch, designed for surface mounting. Operating across a temperature range of -40°C to 85°C, it includes a top-located boot block and asymmetrical sectored architecture.
PackageVFBGA
MountingSurface Mount
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Technical Specifications
Micron M58WR032ET100ZB6 technical specifications.
General
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package/Case
VFBGA
Package Description
Very Thin Fine Pitch Ball Grid Array
Lead Shape
Ball
Pin Count
56
PCB
56
Package Length (mm)
9
Package Width (mm)
7.7
Package Height (mm)
0.66
Seated Plane Height (mm)
0.66
Pin Pitch (mm)
0.75
Package Material
Plastic
Mounting
Surface Mount
Density
32Mbit
Interface Type
Parallel|Serial
Maximum Operating Current
25mA
Block Organization
Asymmetrical
Architecture
Sectored
Programming Voltage
1.65 to 2|11.4 to 12.6V
Timing Type
Asynchronous|Synchronous
Maximum Access Time
100ns
Number of Words
2M
Boot Block
Yes
Typical Operating Supply Voltage
1.8V
Address Bus Width
21bit
Location of Boot Block
Top
Number of Bits per Word
16bit
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Compliance
Cage Code
6Y440
HTS Code
8542320071
Schedule B
8542320070
ECCN
3A991.b.1.a
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Micron M58WR032ET100ZB6 Datasheet
Download the complete datasheet for Micron M58WR032ET100ZB6 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.