32M-bit NOR Flash memory, featuring a 2M x 16 configuration with a parallel interface. This component offers a maximum access time of 70ns and operates at a typical supply voltage of 1.8V, with programming voltages ranging from 1.7 to 2V and 11.4 to 12.6V. The memory utilizes an asymmetrical, sectored architecture with a bottom boot block and a 21-bit address bus. Packaged in a 56-pin VFBGA with a 0.75mm pitch, this surface-mount device measures 9mm x 7.7mm x 0.66mm and operates across a temperature range of -40°C to 85°C.
PackageVFBGA
MountingSurface Mount
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Technical Specifications
Micron M58WR032FB70ZB6E technical specifications.
General
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package/Case
VFBGA
Package Description
Very Thin Fine Pitch Ball Grid Array
Lead Shape
Ball
Pin Count
56
PCB
56
Package Length (mm)
9
Package Width (mm)
7.7
Package Height (mm)
0.66
Seated Plane Height (mm)
0.66
Pin Pitch (mm)
0.75
Package Material
Plastic
Mounting
Surface Mount
Density
32Mbit
Interface Type
Parallel
Maximum Operating Current
30mA
Block Organization
Asymmetrical
Architecture
Sectored
Programming Voltage
1.7 to 2|11.4 to 12.6V
Timing Type
Asynchronous|Synchronous
Maximum Access Time
70ns
Number of Words
2M
Boot Block
Yes
Typical Operating Supply Voltage
1.8V
Address Bus Width
21bit
Location of Boot Block
Bottom
Number of Bits per Word
16bit
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Compliance
Cage Code
6Y440
HTS Code
8542320071
Schedule B
8542320070
ECCN
3A991.b.1.a
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Micron M58WR032FB70ZB6E Datasheet
Download the complete datasheet for Micron M58WR032FB70ZB6E to view detailed technical specifications.
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