64M-bit NOR Flash memory with a parallel interface, featuring a 4M x 16 word organization and 22-bit address bus. This surface-mount component operates at 1.8V typical supply voltage with a maximum access time of 100ns. Housed in a 56-pin VFBGA package (9mm x 7.7mm x 0.66mm) with 0.75mm pin pitch, it supports asymmetrical block organization and a bottom boot block. Operating current is 25mA, with programming voltages ranging from 1.65-2.2V and 11.4-12.6V, and an operating temperature range of -40°C to 85°C.
PackageVFBGA
MountingSurface Mount
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Technical Specifications
Micron M58WR064EB10ZB6T technical specifications.
General
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package/Case
VFBGA
Package Description
Very Thin Fine Pitch Ball Grid Array
Lead Shape
Ball
Pin Count
56
PCB
56
Package Length (mm)
9
Package Width (mm)
7.7
Package Height (mm)
0.66
Seated Plane Height (mm)
0.66
Pin Pitch (mm)
0.75
Package Material
Plastic
Mounting
Surface Mount
Density
64Mbit
Interface Type
Parallel
Maximum Operating Current
25mA
Block Organization
Asymmetrical
Architecture
Sectored
Programming Voltage
1.65 to 2.2|11.4 to 12.6V
Timing Type
Asynchronous|Synchronous
Maximum Access Time
100ns
Number of Words
4M
Boot Block
Yes
Typical Operating Supply Voltage
1.8V
Address Bus Width
22bit
Location of Boot Block
Bottom
Number of Bits per Word
16bit
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Compliance
Cage Code
6Y440
HTS Code
8542320071
Schedule B
8542320070
ECCN
3A991.b.1.a
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Micron M58WR064EB10ZB6T Datasheet
Download the complete datasheet for Micron M58WR064EB10ZB6T to view detailed technical specifications.
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