64M-bit NOR Flash memory, featuring a parallel interface and 1.8V typical operating supply voltage. This integrated circuit offers 4M words with 16 bits per word, accessible within a 70ns maximum access time. The component is housed in a 56-pin VFBGA package with a 0.75mm pin pitch, designed for surface mounting. It supports asymmetrical block organization and sectored architecture, with a boot block located at the bottom.
PackageVFBGA
MountingSurface Mount
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Technical Specifications
Micron M58WR064FB70ZB6F technical specifications.
General
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package/Case
VFBGA
Package Description
Very Thin Fine Pitch Ball Grid Array
Lead Shape
Ball
Pin Count
56
PCB
56
Package Length (mm)
9
Package Width (mm)
7.7
Package Height (mm)
0.66
Seated Plane Height (mm)
0.66
Pin Pitch (mm)
0.75
Package Material
Plastic
Mounting
Surface Mount
Density
64Mbit
Interface Type
Parallel
Maximum Operating Current
30mA
Block Organization
Asymmetrical
Architecture
Sectored
Programming Voltage
1.7 to 2|11.4 to 12.6V
Timing Type
Asynchronous|Synchronous
Maximum Access Time
70ns
Number of Words
4M
Boot Block
Yes
Typical Operating Supply Voltage
1.8V
Address Bus Width
22bit
Location of Boot Block
Bottom
Number of Bits per Word
16bit
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Compliance
Cage Code
6Y440
EU RoHS
Yes
HTS Code
8542320071
Schedule B
8542320070
ECCN
3A991.b.1.a
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Micron M58WR064FB70ZB6F Datasheet
Download the complete datasheet for Micron M58WR064FB70ZB6F to view detailed technical specifications.
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