128M-bit NOR Flash memory with a parallel interface, featuring an 8M x 16 word organization and 80ns maximum access time. This surface-mount component operates at 1.8V, with programming voltages ranging from 1.7 to 2V and 11.4 to 12.6V. Housed in a 56-pin VFBGA package measuring 9mm x 7.7mm x 0.66mm with a 0.75mm pin pitch, it supports asymmetrical block architecture and includes a bottom boot block. Operating current is a maximum of 30mA, with an operating temperature range of -40°C to 85°C.
PackageVFBGA
MountingSurface Mount
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Technical Specifications
Micron M58WR128FB80ZB6E technical specifications.
General
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package/Case
VFBGA
Package Description
Very Thin Fine Pitch Ball Grid Array
Lead Shape
Ball
Pin Count
56
PCB
56
Package Length (mm)
9
Package Width (mm)
7.7
Package Height (mm)
0.66
Seated Plane Height (mm)
0.66
Pin Pitch (mm)
0.75
Package Material
Plastic
Mounting
Surface Mount
Density
128Mbit
Interface Type
Parallel
Maximum Operating Current
30mA
Block Organization
Asymmetrical
Architecture
Sectored
Programming Voltage
1.7 to 2|11.4 to 12.6V
Timing Type
Asynchronous|Synchronous
Maximum Access Time
80ns
Number of Words
8M
Boot Block
Yes
Typical Operating Supply Voltage
1.8V
Address Bus Width
23bit
Location of Boot Block
Bottom
Number of Bits per Word
16bit
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Compliance
Cage Code
6Y440
HTS Code
8542320071
Schedule B
8542320070
ECCN
3A991.b.1.a
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Micron M58WR128FB80ZB6E Datasheet
Download the complete datasheet for Micron M58WR128FB80ZB6E to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.