The MT28F160A3FD-9 T is a 1M-word asynchronous flash memory device with a density of 16M. It features a parallel interface and an asymmetrical block organization. The device operates at a typical supply voltage of 3V and has a maximum operating current of 20mA. It is designed to operate within a temperature range of 0 to 70°C. The memory has a boot block located at the top and supports 16 bits per word. It is suitable for applications requiring high-density storage in a wide range of operating conditions.
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Technical Specifications
Micron MT28F160A3FD-9 T technical specifications.
General
| Density | 16Mbit |
| Interface Type | Parallel |
| Maximum Operating Current | 20mA |
| Block Organization | Asymmetrical |
| Architecture | Sectored |
| Programming Voltage | 2.7 to 3.3|5 to 5.5V |
| Timing Type | Asynchronous |
| Maximum Access Time | 90ns |
| Number of Words | 1M |
| Boot Block | Yes |
| Typical Operating Supply Voltage | 3V |
| Address Bus Width | 20bit |
| Location of Boot Block | Top |
| Number of Bits per Word | 16bit |
| Min Operating Temperature | 0°C |
| Max Operating Temperature | 70°C |
Compliance
| Cage Code | 6Y440 |
| HTS Code | 8542320071 |
| Schedule B | 8542320070 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Micron MT28F160A3FD-9 T Datasheet
Download the complete datasheet for Micron MT28F160A3FD-9 T to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.