DDR2 SDRAM memory chip, 512Mbit density, organized as 64Mx8 with an 8-bit data bus width. Features a maximum clock rate of 800 MHz and a 60-pin FBGA package with 0.8mm pin pitch for surface mounting. Operates at a typical supply voltage of 1.8V, with a maximum access time of 0.4 ns. Suitable for applications requiring high-speed data access within a 0°C to 85°C operating temperature range.
PackageFBGA
MountingSurface Mount
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Technical Specifications
Micron MT47H64M8JN-25E:FTR technical specifications.
General
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package/Case
FBGA
Package Description
Fine Pitch Ball Grid Array
Lead Shape
Ball
Pin Count
60
PCB
60
Package Length (mm)
10
Package Width (mm)
8
Package Height (mm)
0.8
Pin Pitch (mm)
0.8
Package Material
Plastic
Mounting
Surface Mount
Density
512Mbit
Type
DDR2 SDRAM
Organization
64Mx8
Data Bus Width
8bit
Maximum Clock Rate
800MHz
Number of Internal Banks
4
Number of Words per Bank
16M
Maximum Access Time
0.4ns
Density in Bits
536870912bit
Address Bus Width
16bit
Maximum Operating Current
205mA
Typical Operating Supply Voltage
1.8V
Max Operating Supply Voltage
1.9V
Min Operating Supply Voltage
1.7V
Min Operating Temperature
0°C
Max Operating Temperature
85°C
Compliance
Cage Code
6Y440
EU RoHS
No
HTS Code
8542320028
Schedule B
8542320015
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Micron MT47H64M8JN-25E:FTR Datasheet
Download the complete datasheet for Micron MT47H64M8JN-25E:FTR to view detailed technical specifications.
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