DDR2 SDRAM memory chip, 512M bit density, organized as 64Mx8 with an 8-bit data bus. Features a 667 MHz maximum clock rate and 4 internal banks. Packaged in a 60-pin FBGA (Fine Pitch Ball Grid Array) with a 0.8mm pin pitch, measuring 10mm x 8mm x 0.8mm. Operates at a typical 1.8V supply voltage and supports surface mounting.
PackageFBGA
MountingSurface Mount
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Technical Specifications
Micron MT47H64M8JN-3E:F technical specifications.
General
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package/Case
FBGA
Package Description
Fine Pitch Ball Grid Array
Lead Shape
Ball
Pin Count
60
PCB
60
Package Length (mm)
10
Package Width (mm)
8
Package Height (mm)
0.8
Pin Pitch (mm)
0.8
Package Material
Plastic
Mounting
Surface Mount
Density
512Mbit
Type
DDR2 SDRAM
Organization
64Mx8
Data Bus Width
8bit
Maximum Clock Rate
667MHz
Number of Internal Banks
4
Number of Words per Bank
16M
Maximum Access Time
0.45ns
Density in Bits
536870912bit
Address Bus Width
16bit
Maximum Operating Current
180mA
Typical Operating Supply Voltage
1.8V
Max Operating Supply Voltage
1.9V
Min Operating Supply Voltage
1.7V
Min Operating Temperature
0°C
Max Operating Temperature
85°C
Compliance
Cage Code
6Y440
EU RoHS
No
HTS Code
8542320028
Schedule B
8542320015
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Micron MT47H64M8JN-3E:F Datasheet
Download the complete datasheet for Micron MT47H64M8JN-3E:F to view detailed technical specifications.
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