4G-bit parallel NAND Flash memory with a 512M x 8 organization, featuring a 1.8V operating supply voltage and 25µs access time. This surface-mount component utilizes a 63-pin Thin Fine Pitch Ball Grid Array (TFBGA) package measuring 12mm x 9.5mm x 0.8mm. The memory operates with a 30-bit address bus and an 8-bit data bus, offering symmetrical block organization and sectored architecture. Designed for a temperature range of -40°C to 85°C, it has a maximum operating current of 15mA.
Micron NAND04GR3B2CZB6F technical specifications.
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