The NAND04GR3B2DN6E is a 4Gb non-volatile flash memory device with an access time of 25ns and a maximum access time of 25us. It has a 1-bit address bus width and operates at a supply voltage of 1.8V. The device is packaged in a TSOP package and is designed for surface mount applications. It is RoHS compliant and has a maximum operating temperature of 85°C and a minimum operating temperature of -40°C.
PackageTSOP
Current20mA
MountingSurface Mount
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Technical Specifications
Micron NAND04GR3B2DN6E technical specifications.
General
| Access Time | 25ns |
| Access Time-Max | 25us |
| Address Bus Width | 1b |
| Package/Case | TSOP |
| Density | 4Gb |
| Interface | Parallel |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Max Supply Voltage | 1.95V |
| Memory Size | 4Gb |
| Memory Type | Non-Volatile, , FLASH, NAND |
| Min Supply Voltage | 1.7V |
| Mount | Surface Mount |
| Operating Supply Voltage | 1.8V |
| Packaging | Tray |
| RoHS Compliant | Yes |
| Supply Current | 20mA |
| Sync/Async | Asynchronous |
| Word Size | 16b |
Compliance
| RoHS | Compliant |
Datasheet
Micron NAND04GR3B2DN6E Datasheet
Download the complete datasheet for Micron NAND04GR3B2DN6E to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.