PackageTSOP
Current20mA
MountingSurface Mount
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Technical Specifications
Micron NAND04GR3B2DN6E technical specifications.
General
Access Time
25ns
Access Time-Max
25us
Address Bus Width
1b
Package/Case
TSOP
Density
4Gb
Interface
Parallel
Max Operating Temperature
85°C
Min Operating Temperature
-40°C
Max Supply Voltage
1.95V
Memory Size
4Gb
Memory Type
Non-Volatile, , FLASH, NAND
Min Supply Voltage
1.7V
Mount
Surface Mount
Operating Supply Voltage
1.8V
Packaging
Tray
RoHS Compliant
Yes
Supply Current
20mA
Sync/Async
Asynchronous
Word Size
16b
Compliance
RoHS
Compliant
Datasheet
Micron NAND04GR3B2DN6E Datasheet
Download the complete datasheet for Micron NAND04GR3B2DN6E to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.