4G-bit parallel NAND Flash memory, organized as 512M x 8 words, operates at 3.3V with a maximum operating current of 30mA. This memory features a sectored architecture and asynchronous timing, offering a maximum access time of 25,000 ns. Packaged in a 63-pin VFBGA (Very Thin Fine Pitch Ball Grid Array) with dimensions of 12mm x 9.5mm x 0.7mm, it is designed for surface mounting. The component supports a 30-bit address bus and operates within a temperature range of -40°C to 85°C.
Micron NAND04GW3B2AZA6E technical specifications.
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