4G-bit parallel NAND flash memory, 512M x 8 organization, featuring a 3.3V operating voltage and 30mA maximum current. This surface-mount component utilizes a 63-pin Thin Fine Pitch Ball Grid Array (TFBGA) package with dimensions of 12mm x 9.5mm x 0.8mm. It offers asynchronous timing with a maximum access time of 25,000 ns and operates within a temperature range of 0°C to 70°C.
Micron NAND04GW3B2AZB1E technical specifications.
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