The 4Gb NAND Flash Memory is a parallel interface memory device with a 30-bit address bus and a maximum access time of 25us. It operates within a temperature range of -40°C to 85°C and is supplied with a voltage between 2.7V and 3.6V, drawing a maximum current of 30mA. The device is packaged in a TSOP package and is mounted on the surface. It is compliant with RoHS regulations and is available in a tray packaging format.
Micron NAND04GW3B2BN6E technical specifications.
| Access Time-Max | 25us |
| Address Bus Width | 30b |
| Package/Case | TSOP |
| Density | 4Gb |
| Interface | Parallel |
| Max Operating Temperature | 85°C |
| Memory Type | NAND, |
| Min Operating Temperature | -40°C |
| Max Supply Voltage | 3.6V |
| Min Supply Voltage | 2.7V |
| Mount | Surface Mount |
| Packaging | Tray |
| RoHS Compliant | Yes |
| Supply Current | 30mA |
| Sync/Async | Asynchronous |
| Word Size | 8b |
| RoHS | Compliant |
No datasheet is available for this part.
