4G-bit parallel NAND Flash memory, featuring a 512M x 8 organization and 3.3V operating voltage. This component utilizes a sectored architecture with symmetrical block organization and a 30-bit address bus. Packaged in a 63-pin TFBGA with dimensions of 12mm x 9.5mm x 0.8mm, it supports surface mounting. Maximum access time is 25,000 ns, with a maximum operating current of 30 mA, operating across a temperature range of -40°C to 85°C.
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Micron NAND04GW3B2BZB6E technical specifications.
| Basic Package Type | Ball Grid Array |
| Package Family Name | BGA |
| Package/Case | TFBGA |
| Package Description | Thin Fine Pitch Ball Grid Array |
| Lead Shape | Ball |
| Pin Count | 63 |
| PCB | 63 |
| Package Length (mm) | 12 |
| Package Width (mm) | 9.5 |
| Package Height (mm) | 0.8 |
| Seated Plane Height (mm) | 1.2(Max) |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Density | 4Gbit |
| Interface Type | Parallel |
| Maximum Operating Current | 30mA |
| Block Organization | Symmetrical |
| Architecture | Sectored |
| Timing Type | Asynchronous |
| Maximum Access Time | 25000ns |
| Number of Words | 512M |
| Boot Block | No |
| Typical Operating Supply Voltage | 3.3V |
| Address Bus Width | 30bit |
| Number of Bits per Word | 8bit |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 85°C |
| Cage Code | 6Y440 |
| EU RoHS | Yes |
| HTS Code | 8542320071 |
| Schedule B | 8542320070 |
| ECCN | 3A991.b.1.a |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU |
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