4G-bit parallel NAND Flash memory, organized as 512M words x 8 bits, operates at 3V/3.3V with a maximum operating current of 30 mA. This asynchronous memory features a 30-bit address bus and a 25µs maximum access time. The component is housed in a 48-pin TSOP (Thin Small Outline Package) with gull-wing leads, designed for surface mounting. Operating within a temperature range of -40°C to 85°C, it utilizes a symmetrical, sectored block architecture.
Micron NAND04GW3B2CN6 technical specifications.
Download the complete datasheet for Micron NAND04GW3B2CN6 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.