4G bit MLC NAND Flash memory with a parallel interface, operating at 3.3V. Features a symmetrical, sectored architecture and a 512M x 8 word organization. Housed in a 48-pin TSOP package with gull-wing leads for surface mounting, offering a maximum access time of 60µs. Suitable for operation across a temperature range of -40°C to 85°C.
PackageTSOP
MountingSurface Mount
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Technical Specifications
Micron NAND04GW3C2AN6E technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOP
Package/Case
TSOP
Package Description
Thin Small Outline Package
Lead Shape
Gull-wing
Pin Count
48
PCB
48
Package Length (mm)
12
Package Width (mm)
18.4
Package Height (mm)
1
Seated Plane Height (mm)
1.2(Max)
Pin Pitch (mm)
0.5
Package Material
Plastic
Mounting
Surface Mount
Density
4Gbit
Interface Type
Parallel
Maximum Operating Current
20mA
Block Organization
Symmetrical
Architecture
Sectored
Programming Voltage
2.7 to 3.6V
Timing Type
Asynchronous
Maximum Access Time
60000ns
Number of Words
512M
Boot Block
No
Typical Operating Supply Voltage
3.3V
Address Bus Width
8bit
Number of Bits per Word
8bit
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Compliance
Cage Code
6Y440
HTS Code
8542320071
Schedule B
8542320070
ECCN
3A991.b.1.a
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Micron NAND04GW3C2AN6E Datasheet
Download the complete datasheet for Micron NAND04GW3C2AN6E to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.