4G-bit parallel NAND Flash memory, featuring a 256M x 16 word organization. This surface-mount component utilizes a 63-pin Thin Fine Pitch Ball Grid Array (TFBGA) package with a 12mm x 9.5mm footprint. Operating at 3.3V, it offers a maximum access time of 25µs and a maximum operating current of 30mA. The memory architecture is sectored and asynchronous, with a 29-bit address bus and 16-bit word width.
Micron NAND04GW4B2AZB1E technical specifications.
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