4G bit Parallel NAND Flash memory, featuring a 256M x 16 word organization. This component operates with a typical supply voltage of 3V or 3.3V and offers a maximum access time of 25,000 ns. Housed in a 48-pin TSOP package with gull-wing leads for surface mounting, it supports a 29-bit address bus and a 16-bit word width. Designed for a temperature range of -40°C to 85°C, it has a maximum operating current of 30 mA.
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Micron NAND04GW4B2BN6T technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOP |
| Package/Case | TSOP |
| Package Description | Thin Small Outline Package |
| Lead Shape | Gull-wing |
| Pin Count | 48 |
| PCB | 48 |
| Package Length (mm) | 12 |
| Package Width (mm) | 18.4 |
| Package Height (mm) | 1 |
| Seated Plane Height (mm) | 1.2(Max) |
| Pin Pitch (mm) | 0.5 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Density | 4Gbit |
| Interface Type | Parallel |
| Maximum Operating Current | 30mA |
| Block Organization | Symmetrical |
| Architecture | Sectored |
| Timing Type | Asynchronous |
| Maximum Access Time | 25000ns |
| Number of Words | 256M |
| Boot Block | No |
| Typical Operating Supply Voltage | 3|3.3V |
| Address Bus Width | 29bit |
| Number of Bits per Word | 16bit |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 85°C |
| Cage Code | 6Y440 |
| EU RoHS | No |
| HTS Code | 8542320071 |
| Schedule B | 8542320070 |
| ECCN | 3A991.b.1.a |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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