4G bit parallel NAND Flash memory with a 256M x 16 word organization. Features a 3.3V operating voltage, 25µs access time, and 63-pin VFBGA package for surface mounting. This sectored, asynchronous memory operates from -40°C to 85°C with a maximum current draw of 30mA.
Micron NAND04GW4B2CZA6E technical specifications.
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