4G bit parallel NAND Flash memory with 256M x 16 organization. Features a 3.3V operating voltage and a 63-pin VFBGA package for surface mounting. Offers a maximum access time of 25µs and operates across a temperature range of -40°C to 85°C. This component utilizes a symmetrical, sectored architecture with a 29-bit address bus.
Sign in to ask questions about the Micron NAND04GW4B2CZA6F datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Micron NAND04GW4B2CZA6F technical specifications.
| Basic Package Type | Ball Grid Array |
| Package Family Name | BGA |
| Package/Case | VFBGA |
| Package Description | Very Thin Fine Pitch Ball Grid Array |
| Lead Shape | Ball |
| Pin Count | 63 |
| PCB | 63 |
| Package Length (mm) | 12 |
| Package Width (mm) | 9.5 |
| Package Height (mm) | 0.7(Max) |
| Seated Plane Height (mm) | 1.05(Max) |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Density | 4Gbit |
| Interface Type | Parallel |
| Maximum Operating Current | 30mA |
| Block Organization | Symmetrical |
| Architecture | Sectored |
| Timing Type | Asynchronous |
| Maximum Access Time | 25000ns |
| Number of Words | 256M |
| Boot Block | No |
| Typical Operating Supply Voltage | 3.3V |
| Address Bus Width | 29bit |
| Number of Bits per Word | 16bit |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 85°C |
| Cage Code | 6Y440 |
| EU RoHS | Yes |
| HTS Code | 8542320071 |
| Schedule B | 8542320070 |
| ECCN | 3A991.b.1.a |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU |
Download the complete datasheet for Micron NAND04GW4B2CZA6F to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
