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Technical Specifications
Micron NAND08GW3C2BN6E technical specifications.
General
| Access Time | 25ns |
| Access Time-Max | 60us |
| Address Bus Width | 30b |
| Package/Case | TSOP |
| Density | 8Gb |
| Interface | Parallel |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Max Supply Voltage | 3.6V |
| Memory Size | 8Gb |
| Memory Type | Non-Volatile, , FLASH, MLC NAND, NAND |
| Min Supply Voltage | 2.7V |
| Mount | Surface Mount |
| Packaging | Tray |
| Page Size | 2KB |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Supply Current | 30mA |
| Sync/Async | Asynchronous |
| Word Size | 8b |
Compliance
| RoHS | Compliant |
Datasheet
Micron NAND08GW3C2BN6E Datasheet
Download the complete datasheet for Micron NAND08GW3C2BN6E to view detailed technical specifications.
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