Schottky barrier rectifier diode rated for 1 A average forward current and 20 V repetitive peak reverse voltage. The device uses a metallurgically bonded silicon construction and is positioned for high-reliability applications within the 1N5817 family. It operates across a -55°C to 150°C temperature range and supports 50 A peak non-repetitive surge current. This part is a single through-hole rectifier intended for low-voltage power rectification and protection functions.
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| Element Configuration | Single |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Peak Non-Repetitive Surge Current | 50A |
| RoHS Compliant | No |
| RoHS | Not Compliant |
Download the complete datasheet for Microsemi 1N5817 to view detailed technical specifications.
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