NPN Silicon Bipolar Junction Transistor (BJT) designed for small signal applications. Features a continuous collector current (I(C)) of 0.8A and a collector-emitter breakdown voltage (V(BR)CEO) of 50V. This hermetically sealed, ceramic CERSOT-3 packaged transistor has 3 terminals and a single element. Operates across a wide temperature range from -65°C to 200°C.
Quick Jump:
Technical Specifications
Microsemi 2N2222AUB technical specifications.
General
| Max Operating Temperature | 200 |
| Number of Terminals | 3 |
| Min Operating Temperature | -65 |
| Terminal Position | DUAL |
| Pin Count | 3 |
| Number of Elements | 1 |
Compliance
| RoHS | No |
| Eccn Code | EAR99 |
| Lead Free | No |
| REACH | not_compliant |
| Military Spec | True |
Datasheet
Microsemi 2N2222AUB Datasheet
Download the complete datasheet for Microsemi 2N2222AUB to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.