
This device is a PNP small-signal silicon transistor qualified to MIL-PRF-19500/291. It supports 60 V collector-emitter and collector-base voltage ratings, a 5.0 V emitter-base voltage rating, and 600 mA collector current. Total power dissipation is rated to 0.4 W at 25°C ambient or 1.8 W at 25°C case temperature, with an operating and storage junction temperature range of -65°C to +200°C. Electrical characteristics include DC current gain up to 300 at 150 mA, output capacitance of 8.0 pF, input capacitance of 30 pF, and switching times of 45 ns turn-on and 300 ns turn-off.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Microsemi 2N2907A datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Max Operating Temperature | 200 |
| Number of Terminals | 3 |
| Terminal Position | BOTTOM |
| JEDEC Package Code | TO-206AA |
| Pin Count | 3 |
| Number of Elements | 1 |
| RoHS | No |
| Eccn Code | EAR99 |
| Lead Free | No |
| HTS Code | 8541.21.00.95 |
| REACH | not_compliant |
| Military Spec | False |
Download the complete datasheet for Microsemi 2N2907A to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.