PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a maximum collector current (I(C)) of 0.6A and a collector-emitter breakdown voltage (V(BR)CEO) of 60V. This hermetically sealed, ceramic CERSOT-3 packaged transistor offers a maximum operating temperature of 200°C and has 3 terminals.
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Technical Specifications
Microsemi 2N2907AUB technical specifications.
General
| Max Operating Temperature | 200 |
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| Pin Count | 3 |
| Number of Elements | 1 |
Compliance
| RoHS | No |
| Eccn Code | EAR99 |
| Lead Free | No |
| HTS Code | 8541.21.00.95 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Microsemi 2N2907AUB Datasheet
Download the complete datasheet for Microsemi 2N2907AUB to view detailed technical specifications.
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