Power Field-Effect Transistor, 30A I(D), 1000V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4
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Microsemi APT10026JFLL technical specifications.
| Continuous Drain Current (ID) | 30A |
| Current Rating | 30A |
| Drain to Source Voltage (Vdss) | 1kV |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 7.11nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Screw |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 39ns |
| Turn-On Delay Time | 17ns |
| DC Rated Voltage | 1kV |
| RoHS | Compliant |
No datasheet is available for this part.
