Microsemi
APT10050B2VFRG
Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3
PackageTO-264-3
Current Rating21A
MountingThrough Hole
Power520W
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Technical Specifications
Microsemi APT10050B2VFRG technical specifications.
General
Package/Case
TO-264-3
Continuous Drain Current (ID)
21A
Current Rating
21A
Drain to Source Voltage (Vdss)
600V
Fall Time
8ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
8.9nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625W
Mount
Through Hole
Number of Elements
1
Packaging
Rail/Tube
Power Dissipation
520W
Radiation Hardening
No
Rds On Max
110mR
RoHS Compliant
Yes
Series
POWER MOS V®
Turn-Off Delay Time
59ns
Turn-On Delay Time
16ns
DC Rated Voltage
1kV
Compliance
RoHS
Compliant
Datasheet
Microsemi APT10050B2VFRG Datasheet
Download the complete datasheet for Microsemi APT10050B2VFRG to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.