Power Field-Effect Transistor, 19A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4
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| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 19A |
| Current Rating | 19A |
| Drain to Source Voltage (Vdss) | 1kV |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 7.9nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 450W |
| Mount | Chassis Mount, Screw |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Rds On Max | 500mR |
| RoHS Compliant | Yes |
| Series | POWER MOS V® |
| Turn-Off Delay Time | 59ns |
| Turn-On Delay Time | 16ns |
| DC Rated Voltage | 1kV |
| RoHS | Compliant |
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