N-Channel Power MOSFET featuring 500V drain-source voltage and 100A continuous drain current. This silicon metal-oxide semiconductor field-effect transistor offers a low 0.036-ohm drain-to-source resistance and a maximum power dissipation of 960W. Designed for chassis mounting with screw terminals, it operates within a temperature range of -55°C to 150°C and is RoHS compliant. Key electrical characteristics include a 24.6nF input capacitance and switching times of 105ns turn-on and 280ns turn-off delay.
PackageSOT-227-4
Current Rating100A
MountingChassis Mount, Screw
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Microsemi APT100M50J technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 100A |
| Current Rating | 100A |
| Drain to Source Resistance | 28mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 90ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.6mm |
| Input Capacitance | 24.6nF |
| Lead Free | Lead Free |
| Length | 38.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 960W |
| Mount | Chassis Mount, Screw |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 960W |
| Radiation Hardening | No |
| Rds On Max | 38mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 280ns |
| Turn-On Delay Time | 105ns |
| DC Rated Voltage | 500V |
| Weight | 1.058219oz |
| Width | 25.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi APT100M50J Datasheet
Download the complete datasheet for Microsemi APT100M50J to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.