Power Field-Effect Transistor, 30A I(D), 1200V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4
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| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 30A |
| Current Rating | 30A |
| Drain to Source Voltage (Vdss) | 1.2kV |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 9.48nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 690W |
| Mount | Chassis Mount, Screw |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Power Dissipation | 690W |
| Radiation Hardening | No |
| Rds On Max | 330mR |
| RoHS Compliant | Yes |
| Series | POWER MOS 7® |
| Turn-Off Delay Time | 79ns |
| Turn-On Delay Time | 23ns |
| DC Rated Voltage | 1.2kV |
| RoHS | Compliant |
