The APT13GP120BDQ1G is a TO-247 packaged insulated gate bipolar transistor with a collector emitter voltage of 1.2kV and a maximum collector current of 41A. It is designed for through hole mounting and has a maximum operating temperature of 150°C. The device is lead free and RoHS compliant, making it suitable for use in a variety of applications. The transistor is available in rail or tube packaging and is not radiation hardened.
Microsemi APT13GP120BDQ1G technical specifications.
| Package/Case | TO-247 |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Current Rating | 41A |
| Lead Free | Lead Free |
| Max Collector Current | 41A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 1.2kV |
| RoHS | Compliant |
No datasheet is available for this part.
