Microsemi
APT5028BVRG
Power Field-Effect Transistor, 20A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Current Rating20A
MountingThrough Hole
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Technical Specifications
Microsemi APT5028BVRG technical specifications.
General
| Continuous Drain Current (ID) | 20A |
| Current Rating | 20A |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 3.18nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi APT5028BVRG Datasheet
Download the complete datasheet for Microsemi APT5028BVRG to view detailed technical specifications.
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