Power Field-Effect Transistor, 20A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Microsemi APT5028BVRG technical specifications.
| Continuous Drain Current (ID) | 20A |
| Current Rating | 20A |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 3.18nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 500V |
| RoHS | Compliant |
No datasheet is available for this part.
