Microsemi
APT50M50JVR
Power Field-Effect Transistor, 77A I(D), 500V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4
PackageSOT-227-4
Current Rating77A
MountingChassis Mount, Screw
Power700W
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Technical Specifications
Microsemi APT50M50JVR technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 77A |
| Current Rating | 77A |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 19.6nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700W |
| Mount | Chassis Mount, Screw |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Power Dissipation | 700W |
| Radiation Hardening | No |
| Rds On Max | 50mR |
| RoHS Compliant | Yes |
| Series | POWER MOS V® |
| Turn-Off Delay Time | 85ns |
| Turn-On Delay Time | 25ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi APT50M50JVR Datasheet
Download the complete datasheet for Microsemi APT50M50JVR to view detailed technical specifications.
No datasheet is available for this part.