APT56M50L

Datasheet

500V 56A N-Channel MOSFET, 100mR Rds On, TO-264

Microsemi

APT56M50L

Name: APT56M50L Microsemi
Brand: Microsemi
SKU: APT56M50L

500V 56A N-Channel MOSFET, 100mR Rds On, TO-264

N-Channel Power MOSFET featuring 500V drain-source voltage and 56A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 100mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-264-3 package, it boasts a maximum power dissipation of 780W and operates within a temperature range of -55°C to 150°C. Key switching parameters include a 38ns turn-on delay and 33ns fall time. RoHS compliant.

PackageTO-264-3

Current Rating56A

MountingThrough Hole

PolarityN-CHANNEL

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Technical Specifications

Microsemi APT56M50L technical specifications.

General

Package/Case	TO-264-3
Continuous Drain Current (ID)	56A
Current Rating	56A
Drain to Source Resistance	85mR
Drain to Source Voltage (Vdss)	500V
Drain-source On Resistance-Max	100mR
Fall Time	33ns
Gate to Source Voltage (Vgs)	30V
Height	5.21mm
Input Capacitance	8.8nF
Lead Free	Lead Free
Length	26.49mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	780W
Mount	Through Hole
Number of Elements	1
Package Quantity	46
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	780W
Radiation Hardening	No
Rds On Max	100mR
RoHS Compliant	Yes
Turn-Off Delay Time	100ns
Turn-On Delay Time	38ns
DC Rated Voltage	500V
Weight	0.373904oz
Width	20.5mm