The APT75GP120JDQ3 is a high-power insulated gate bipolar transistor (IGBT) with a maximum collector current of 128A and a maximum collector-emitter voltage of 1.2kV. It is packaged in a SOT-227 case and is designed for screw mount applications. The device is rated for operation over a temperature range of -55°C to 150°C and has a maximum power dissipation of 543W. The APT75GP120JDQ3 is lead-free and RoHS compliant.
PackageSOT-227
MountingScrew
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Technical Specifications
Microsemi APT75GP120JDQ3 technical specifications.
General
| Package/Case | SOT-227 |
| Collector Emitter Saturation Voltage | 3.3V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 1.2kV |
| Height | 9.6mm |
| Lead Free | Lead Free |
| Length | 38.2mm |
| Max Collector Current | 128A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 543W |
| Mount | Screw |
| Package Quantity | 11 |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Weight | 1.058219oz |
| Width | 25.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi APT75GP120JDQ3 Datasheet
Download the complete datasheet for Microsemi APT75GP120JDQ3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.