The APT75GP120JDQ3 is a high-power insulated gate bipolar transistor (IGBT) with a maximum collector current of 128A and a maximum collector-emitter voltage of 1.2kV. It is packaged in a SOT-227 case and is designed for screw mount applications. The device is rated for operation over a temperature range of -55°C to 150°C and has a maximum power dissipation of 543W. The APT75GP120JDQ3 is lead-free and RoHS compliant.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Microsemi APT75GP120JDQ3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Microsemi APT75GP120JDQ3 technical specifications.
| Package/Case | SOT-227 |
| Collector Emitter Saturation Voltage | 3.3V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 1.2kV |
| Height | 9.6mm |
| Lead Free | Lead Free |
| Length | 38.2mm |
| Max Collector Current | 128A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 543W |
| Mount | Screw |
| Package Quantity | 11 |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Weight | 1.058219oz |
| Width | 25.4mm |
| RoHS | Compliant |
Download the complete datasheet for Microsemi APT75GP120JDQ3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
