The APTGF100A120TG is a high-power insulated gate bipolar transistor (IGBT) from Microsemi, featuring a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 135A. It is designed for use in high-power applications and has a maximum power dissipation of 568W. The device is packaged in a flange mount configuration and is RoHS compliant. The operating temperature range is -40°C to 150°C, making it suitable for use in a variety of environments.
PackageModule
MountingChassis Mount, Screw
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Technical Specifications
Microsemi APTGF100A120TG technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 3.7V |
| Input | Standard |
| Input Capacitance | 6.9nF |
| Max Collector Current | 135A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 568W |
| Mount | Chassis Mount, Screw |
| NTC Thermistor | Yes |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi APTGF100A120TG Datasheet
Download the complete datasheet for Microsemi APTGF100A120TG to view detailed technical specifications.
No datasheet is available for this part.