The APTGF150DA120TG is a high-power insulated gate bipolar transistor from Microsemi, featuring a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 200A. It is designed for use in high-power applications and is mounted via a chassis mount with screw. The device is compliant with RoHS regulations and includes an NTC thermistor for temperature monitoring. The APTGF150DA120TG is packaged in a module format with a flange mount, suitable for use in a variety of applications.
PackageModule
MountingChassis Mount, Screw
Quick Jump:
Chat with Datasheet
Sponsored by
Sign in to ask questions about the Microsemi APTGF150DA120TG datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Technical Specifications
Microsemi APTGF150DA120TG technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector-emitter Voltage-Max | 3.7V |
| Input | Standard |
| Input Capacitance | 10.2nF |
| Max Collector Current | 200A |
| Max Power Dissipation | 961W |
| Mount | Chassis Mount, Screw |
| NTC Thermistor | Yes |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi APTGF150DA120TG Datasheet
Download the complete datasheet for Microsemi APTGF150DA120TG to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.